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101.
Molecular dynamics simulation was performed to study the formation of cluster structure, interfaces, and surfaces with different curvature radii in a perfect nanocrystal passed through by a nonlinear wave. It is shown that this process is a type of nanostructure self-organization in response to an external energy flux with subsequent development of a strong rotational field.  相似文献   
102.
Bruzy  N.  Coret  M.  Huneau  B.  Kermouche  G.  Mondon  M.  Bertrand  E.  Stainier  L. 《Experimental Mechanics》2019,59(8):1145-1157

The allotropic phase change from ferrite to austenite represents a moment of massive interplay between the microstructural and mechanical states of iron. The difference of compacity between the two phases induces a microplastic accommodation in the material at grain scale. However, mechanical heterogeneities resulting from the transformation process remain challenging to characterise due to the high temperature conditions it is associated with. We developed experimental equipment for in situ observation of α ? γ and γ ? α transformations. Images of the surface of an iron sample taken by an optical camera were used as input for a Digital Image Correlation (DIC) routine. Special care was taken to maximize image resolution to capture sub-grain phenomena. Observations show that, at the mesoscopic scale, shear strain fields exhibit strong localisations that are evidence of transformations that are occurring.

  相似文献   
103.
Radiophysics and Quantum Electronics - Wind-related weather hazards remain difficult to recognize targets for weather radars. Methods that use estimates of the width of the reflected-signal...  相似文献   
104.
Russian Journal of General Chemistry - Highly dispersed CaO has been synthesized by heating an aqueous solution of calcium nitrate and D-glucose up to 800°C. Calcium oxide is formed with an...  相似文献   
105.
Russian Journal of Organic Chemistry - Methyl (Z)-3-[(2R,3R,4S,5S)-5-(2-methoxy-2-oxoethyl)-3,4-(isopropylidenedioxy)tetrahydrofuran-2-yl]-prop-2-enoate was synthesized, and its intramolecular...  相似文献   
106.
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.  相似文献   
107.
Journal of Analytical Chemistry - HPTLC is a widely used tool in standardization of herbs because of its ability to estimate the presence of active components in samples. HPTLC-bioautography is a...  相似文献   
108.
Journal of Applied Spectroscopy - Aqueous solutions of human hemoglobin have been studied by the multi-angle static light scattering method. The tendency of sickle-shaped erythrocytes to aggregate...  相似文献   
109.
Xu  H. J.  Zhang  Q. G.  Debenest  G. 《Transport in Porous Media》2021,140(3):625-627
Transport in Porous Media - The theme of coupling problems for adsorption, absorption and thermochemical transport in porous media is very important for engineering applications. Based on the...  相似文献   
110.
Aliev  A. B.  Shafieva  G. H. 《Differential Equations》2022,58(8):1028-1042
Differential Equations - We study a mixed problem for systems of one-dimensional semilinear hyperbolic equations with variable nonlinearity growth rate and nonlinear boundary conditions. Theorems...  相似文献   
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